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CSD18532KCS - 60V N-Channel MOSFET

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General Description

This 60V, 3.3mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Drain (Pin 2) Gate (Pin 1) Source (Pin 3) 12 TC = 25°C Id = 100A 10 TC = 125ºC Id = 100A 8 6 4 2 Product Summary TA = 25°C TYPICAL VALUE VDS Drain-to-Source Voltage 60 Qg Gate Charge Total (10V) 44 Qgd Gate Charge Gate-to-Drain 6.9 RDS(on) Drain-to-Source On Resistance VGS = 4.5V VGS = 10V 4.2 3.3 VGS(th) Threshold Voltage 1.8 UNIT V nC nC mΩ mΩ V Device Ordering Information(1) Package Media Qty Ship CSD18532KCS TO-220 Plastic Package Tube 50 Tube (1) For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings TA = 25°C VALUE VDS Drain-to-Source Voltage 60 VGS Gate-to-Source Voltage ±20 Continuous Drain Current (Package limited), TC = 25°C 100 ID Continuous Drain Current (Silicon limited), TC = 25°C 169 Continuous Drain Current (Silicon limited), TC = 100°C 116 IDM Pulsed Drain Current (1) 400 PD Power Dissipation 250 TJ, Operating Junction and Tstg Storage Temperature Range –55 to 175 EAS Avalanche Energy, single pulse ID = 75A, L = 0.1mH, RG = 25Ω 281 UNIT V V A A W °C mJ (1) Pulse duration ≤300μs, duty cycle ≤2% 10 ID = 100A VDS = 30V 8 6 4 2 RDS(on) - On-State Resistance (mΩ) VGS - Gate-to-Source Voltage (V) 0 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate-to- Source Voltage (V) G001 RDS(on) vs VGS 0 0 5 10 15 20 25 30 35 40 45 50 Qg - Gate Charge (nC) G001 Gate Charge An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use

Overview

CSD18532KCS SLPS361C – AUGUST 2012 – REVISED MARCH 2024 CSD18532KCS 60V N-Channel NexFET™ Power MOSFET.

Key Features

  • Ultra-low Qg and Qgd.
  • Low thermal resistance.
  • Avalanche rated.
  • Logic level.
  • Pb free terminal plating.
  • RoHS compliant.
  • Halogen free.
  • TO-220 plastic package 2.

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