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CSD18533Q5A - power MOSFET

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General Description

This 4.7 mΩ, 60 V, SON 5 × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Top View S1 8D S2 7D S3 G4 D 6D 5D P0093-01 Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package limited), TC = 25°C ID Continuous Drain Current (Silicon limited), TC = 25°C Continuous Drain Current, TA = 25°C(1) IDM Pulsed Drain Current, TA = 25°C(2) Power Dissipation(1) PD Power Dissipation, TC = 25°C VALUE 60 ±20 100 103 17 267 3.2 116 UNIT V V A A W TJ, Operating Junction and Tstg Storage Temperature Range EAS Avalanche Energy, single pulse ID = 53 A, L = 0.1 mH, RG = 25 Ω –55 to 150 °C 140 mJ (1) Typical RθJA = 40°C/W on a 1 inch2, 2 oz.

Cu pad on a 0.06 inch thick FR4 PCB.

Overview

Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD18533Q5A SLPS388B – SEPTEMBER 2012 – REVISED JANUARY 2015 CSD18533Q5A 60 V N-Channel NexFET™ Power MOSFET.

Key Features

  • 1 Ultra Low Qg and Qgd.
  • Low Thermal Resistance.
  • Avalanche Rated.
  • Logic Level.
  • Pb Free Terminal Plating.
  • RoHS Compliant.
  • Halogen Free.
  • SON 5 mm × 6 mm Plastic Package 2.

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