CSD19533Q5A
Features
- 1 Ultra-Low Qg and Qgd
- Low Thermal Resistance
- Avalanche Rated
- Pb-Free Terminal Plating
- Ro HS pliant
- Halogen Free
- SON 5-mm × 6-mm Plastic Package
Product Summary
TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate to Drain
RDS(on) Drain-to-Source On Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
VGS = 6 V VGS = 10 V
8.7 7.8
UNIT V n C n C mΩ mΩ V
2 Applications
- Primary Side Tele
- Secondary Side Synchronous Rectifier
- Motor Control
3 Description
This 100 V, 7.8 mΩ, SON 5 mm × 6 mm Nex FET™ power MOSFET is designed to minimize losses in power conversion applications.
Top View
S1
8D
S2
7D
S3 G4
6D
5D
P0093-01
Device CSD19533Q5A CSD19533Q5AT
. Ordering Information(1)
Media
Qty...
