• Part: CSD19533KCS
  • Description: 100V N-Channel Power MOSFET
  • Category: MOSFET
  • Manufacturer: Texas Instruments
  • Size: 677.53 KB
Download CSD19533KCS Datasheet PDF
Texas Instruments
CSD19533KCS
Features - 1 Ultra-Low Qg and Qgd - Low Thermal Resistance - Avalanche Rated - Pb Free Terminal Plating - Ro HS pliant - Halogen Free - TO-220 Plastic Package 2 Applications - Secondary Side Synchronous Rectifier - Motor Control 3 Description This 100 V, 8.7 mΩ, TO-220 Nex FET™ power MOSFET is designed to minimize losses in power conversion applications. Drain (Pin 2) Gate (Pin 1) Source (Pin 3) Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE VGS = 6 V VGS = 10 V 9.7 8.7 UNIT V n C n C mΩ mΩ V Device CSD19533KCS Ordering Information(1) Package Media Qty TO-220 Plastic Package Tube Ship Tube (1) For all available packages, see the orderable addendum at the end of the data sheet. Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package...