CSD19535KCS
Features
- 1 Ultra-Low Qg and Qgd
- Low Thermal Resistance
- Avalanche Rated
- Pb-Free Terminal Plating
- Ro HS pliant
- Halogen Free
- TO-220 Plastic Package
2 Applications
- Secondary Side Synchronous Rectifier
- Motor Control
3 Description
This 100 V, 3.1 mΩ, TO-220 Nex FET™ power MOSFET is designed to minimize losses in power conversion applications.
SPACE
Drain (Pin 2)
Gate (Pin 1)
.
Source (Pin 3)
Product Summary
TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate to Drain
RDS(on) Drain-to-Source On Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
VGS = 6 V VGS = 10 V
3.4 3.1
UNIT V n C n C mΩ mΩ V
Device CSD19535KCS
Ordering Information(1)
Package
Media
TO-220 Plastic Package Tube
Qty 50
Ship Tube
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source...
