• Part: CSD19535KTT
  • Description: 100V N-Channel Power MOSFET
  • Category: MOSFET
  • Manufacturer: Texas Instruments
  • Size: 372.43 KB
Download CSD19535KTT Datasheet PDF
Texas Instruments
CSD19535KTT
Features - 1 Ultra-Low Qg and Qgd - Low-Thermal Resistance - Avalanche Rated - Lead-Free Terminal Plating - Ro HS pliant - Halogen Free - D2PAK Plastic Package 2 Applications - Hot Swap - Motor Control - Secondary Side Synchronous Rectifier 3 Description This 100-V, 2.8 mΩ, D2PAK (TO-263) Nex FET™ power MOSFET is designed to minimize losses in power conversion applications. . Pin Out Drain (Pin 2) Gate (Pin 1) Source (Pin 3) . Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE VGS = 6 V VGS = 10 V 3.2 2.8 UNIT V n C n C mΩ DEVICE CSD19535KTT CSD19535KTTT Device Information(1) QTY MEDIA PACKAGE 500 13-Inch Reel D2PAK Plastic...