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CSD23202W10 - P-Channel Power MOSFET

General Description

This 12 V, 44 mΩ device is designed to deliver the lowest on-resistance and gate charge in a small 1 mm × 1 mm outline with excellent thermal characteristics in an ultra-low profile.

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Key Features

  • 1 Ultra-Low Qg and Qgd.
  • Small Footprint 1 mm × 1 mm.
  • Low Profile 0.62-mm Height.
  • Pb Free.
  • Gate ESD Protection.
  • 3 kV.
  • RoHS Compliant.
  • Halogen Free 2.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD23202W10 SLPS506 – AUGUST 2014 CSD23202W10 12-V P-Channel NexFET™ Power MOSFET 1 Features •1 Ultra-Low Qg and Qgd • Small Footprint 1 mm × 1 mm • Low Profile 0.62-mm Height • Pb Free • Gate ESD Protection – 3 kV • RoHS Compliant • Halogen Free 2 Applications • Battery Management • Load Switch • Battery Protection 3 Description This 12 V, 44 mΩ device is designed to deliver the lowest on-resistance and gate charge in a small 1 mm × 1 mm outline with excellent thermal characteristics in an ultra-low profile. . Top View D D G S P0097-01 . . . . Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (–4.