Datasheet Details
| Part number | CSD25402Q3A |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 1.04 MB |
| Description | P-Channel Power MOSFET |
| Datasheet |
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| Part number | CSD25402Q3A |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 1.04 MB |
| Description | P-Channel Power MOSFET |
| Datasheet |
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This –20-V, 7.7-mΩ NexFET™ power MOSFET is designed to minimize losses in power conversion load management applications with a SON 3.3 mm × 3.3 mm package that offers an excellent thermal performance for the size of the device.
Top View D1 D2 8S 7S D3 4 G 6S S 5 S Product Summary TA = 25°C VDS Drain-to-source voltage Qg Gate charge total (–4.5 V) Qgd Gate charge gate to drain RDS(on) Drain-to-source on resistance Vth Threshold voltage TYPICAL VALUE –20 7.5 1.1 VGS = –1.8 V VGS = –2.5 V VGS = –4.5 V –0.9 74 13.3 7.7 UNIT V nC nC mΩ mΩ mΩ V Ordering Information(1) DEVICE QTY MEDIA PACKAGE CSD25402Q3A 2500 13-Inch Reel SON 3.3 mm × 3.3 CSD25402Q3AT 250 7-Inch Reel mm Plastic Package SHIP Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings TA = 25°C VDS Drain-to-source voltage VGS Gate-to-source voltage Continuous drain current, TC = 25°C ID Continuous drain current (package limit) Continuous drain current(1) IDM Pulsed drain current(2) Power dissipation(1) PD Power dissipation, TC = 25°C TJ Operating junction temperature Tstg Storage temperature VALUE –20 +12 or –12 –76 –35 –15 –148 2.8 69 –55 to 150 –55 to 150 UNIT V V A A A A W °C °C (1) Typical RθJA = 45°C/W on 1 inch2 Cu (2 oz.) on 0.060 inch thick FR4 PCB.
Product Folder Sample & Buy Technical Documents Tools & Software Support & Community Reference Design CSD25402Q3A SLPS454B – DECEMBER 2013 – REVISED JANUARY 2016 CSD25402Q3A –20 V P-Channel NexFET™ Power MOSFET.
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