Datasheet Details
| Part number | CSD25480F3 |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 1.10 MB |
| Description | P-Channel Power MOSFET |
| Datasheet |
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| Part number | CSD25480F3 |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 1.10 MB |
| Description | P-Channel Power MOSFET |
| Datasheet |
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This –20-V, 110-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications.
This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.
Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (–4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE –20 0.7 0.10 VGS = –1.8 V 420 VGS = –2.5 V 203 VGS = –4.5 V 132 VGS = –8.0 V 110 –0.95 UNIT V nC nC mΩ V DEVICE CSD25480F3 CSD25480F3T Device Information(1) QTY MEDIA PACKAGE 3000 250 7-Inch Reel Femto 0.73-mm × 0.64-mm Land Grid Array (LGA) SHIP Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.
Product Folder Order Now Technical Documents Tools & Software Support & Community CSD25480F3 SLPS578A – APRIL 2016 – REVISED AUGUST 2017 CSD25480F3 –20-V P-Channel FemtoFET™ MOSFET.
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