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CSD25483F4T - P-Channel Power MOSFET

This page provides the datasheet information for the CSD25483F4T, a member of the CSD25483F4 P-Channel Power MOSFET family.

Description

This 210 mΩ, 20 V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications.

This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

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Features

  • 1 Ultra-Low On-Resistance.
  • Ultra-Low Qg and Qgd.
  • High Operating Drain Current.
  • Ultra-Small Footprint (0402 Case Size).
  • 1.0 mm × 0.6 mm.
  • Ultra-Low Profile.
  • 0.35 mm Max Height.
  • Integrated ESD Protection Diode.
  • Rated >4 kV HBM.
  • Rated >2 kV CDM.
  • Lead and Halogen Free.
  • RoHS Compliant 2.

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Datasheet preview – CSD25483F4T

Datasheet Details

Part number CSD25483F4T
Manufacturer Texas Instruments
File Size 1.42 MB
Description P-Channel Power MOSFET
Datasheet download datasheet CSD25483F4T Datasheet
Additional preview pages of the CSD25483F4T datasheet.

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Full PDF Text Transcription

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD25483F4 SLPS449D – OCTOBER 2013 – REVISED OCTOBER 2014 CSD25483F4 20 V P-Channel FemtoFET™ MOSFET 1 Features •1 Ultra-Low On-Resistance • Ultra-Low Qg and Qgd • High Operating Drain Current • Ultra-Small Footprint (0402 Case Size) – 1.0 mm × 0.6 mm • Ultra-Low Profile – 0.
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