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CSD25481F4 - P-Channel Power MOSFET

Description

This 90 mΩ, 20 V P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications.

This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

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Features

  • 1 Ultra-Low On Resistance.
  • Ultra-Low Qg and Qgd.
  • High Operating Drain Current.
  • Ultra-Small Footprint (0402 Case Size).
  • 1 mm × 0.6 mm.
  • Ultra-Low Profile.
  • 0.35 mm Max Height.
  • Integrated ESD Protection Diode.
  • Rated >4 kV HBM.
  • Rated >2 kV CDM.
  • Lead and Halogen Free.
  • RoHS Compliant 2.

📥 Download Datasheet

Datasheet preview – CSD25481F4

Datasheet Details

Part number CSD25481F4
Manufacturer Texas Instruments
File Size 373.31 KB
Description P-Channel Power MOSFET
Datasheet download datasheet CSD25481F4 Datasheet
Additional preview pages of the CSD25481F4 datasheet.

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Full PDF Text Transcription

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Product Folder Order Now Technical Documents Tools & Software Support & Community CSD25481F4 SLPS420E – SEPTEMBER 2013 – REVISED DECEMBER 2017 CSD25481F4 20 V P-Channel FemtoFET™ MOSFET 1 Features •1 Ultra-Low On Resistance • Ultra-Low Qg and Qgd • High Operating Drain Current • Ultra-Small Footprint (0402 Case Size) – 1 mm × 0.6 mm • Ultra-Low Profile – 0.
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