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CSD25480F3T Datasheet P-Channel Power MOSFET

Manufacturer: Texas Instruments

Download the CSD25480F3T datasheet PDF. This datasheet also includes the CSD25480F3 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (CSD25480F3-etcTI.pdf) that lists specifications for multiple related part numbers.

General Description

This –20-V, 110-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications.

This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.

Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (–4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE –20 0.7 0.10 VGS = –1.8 V 420 VGS = –2.5 V 203 VGS = –4.5 V 132 VGS = –8.0 V 110 –0.95 UNIT V nC nC mΩ V DEVICE CSD25480F3 CSD25480F3T Device Information(1) QTY MEDIA PACKAGE 3000 250 7-Inch Reel Femto 0.73-mm × 0.64-mm Land Grid Array (LGA) SHIP Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.

Overview

Product Folder Order Now Technical Documents Tools & Software Support & Community CSD25480F3 SLPS578A – APRIL 2016 – REVISED AUGUST 2017 CSD25480F3 –20-V P-Channel FemtoFET™ MOSFET.

Key Features

  • 1 Low On-Resistance.
  • Ultra-Low Qg and Qgd.
  • Ultra-Small Footprint.
  • 0.73 mm × 0.64 mm.
  • Low Profile.
  • 0.35-mm Max Height.
  • Integrated ESD Protection Diode.
  • Lead and Halogen Free.
  • RoHS Compliant 2.

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