CSD87501L Description
This 30-V, 6.6-mΩ, 3.37-mm × 1.47-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small size and mon drain configuration make the device ideal for multi-cell battery pack applications and small handheld devices. (2) Typical min Cu RθJA = 135°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.
CSD87501L Key Features
- 1 Low on-resistance
- Small footprint of 3.37 mm × 1.47 mm
- Ultra-low profile
- 0.2-mm high
- Lead free
- RoHS pliant
- Halogen free
- Gate ESD protection