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CSD87501L - 30-V Dual Common Drain N-Channel NexFET Power MOSFET

Datasheet Summary

Description

This 30-V, 6.6-mΩ, 3.37-mm × 1.47-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint.

Its small size and common drain configuration make the device ideal for multi-cell battery pack applications and small handheld devices.

Features

  • 1 Low on-resistance.
  • Small footprint of 3.37 mm × 1.47 mm.
  • Ultra-low profile.
  • 0.2-mm high.
  • Lead free.
  • RoHS compliant.
  • Halogen free.
  • Gate ESD protection Product Summary TA = 25°C VS1S2 Source-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RS1S2(on) Source-to-Source OnResistance VGS(th) Threshold Voltage.

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Datasheet preview – CSD87501L

Datasheet Details

Part number CSD87501L
Manufacturer Texas Instruments
File Size 1.44 MB
Description 30-V Dual Common Drain N-Channel NexFET Power MOSFET
Datasheet download datasheet CSD87501L Datasheet
Additional preview pages of the CSD87501L datasheet.

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Full PDF Text Transcription

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Product Folder Order Now Technical Documents Tools & Software Support & Community CSD87501L SLPS523B – FEBRUARY 2015 – REVISED MAY 2019 CSD87501L 30-V Dual Common Drain N-Channel NexFET™ Power MOSFET 1 Features •1 Low on-resistance • Small footprint of 3.37 mm × 1.47 mm • Ultra-low profile – 0.2-mm high • Lead free • RoHS compliant • Halogen free • Gate ESD protection Product Summary TA = 25°C VS1S2 Source-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RS1S2(on) Source-to-Source OnResistance VGS(th) Threshold Voltage TYPICAL VALUE 30 15 6.0 VGS = 4.5 V VGS = 10 V 1.8 9.3 6.6 UNIT V nC nC mΩ V 2 Applications • Battery management • Battery protection • USB Type-C / PD 3 Description This 30-V, 6.6-mΩ, 3.37-mm × 1.
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