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CSD87501L Datasheet 30-V Dual Common Drain N-Channel NexFET Power MOSFET

Manufacturer: Texas Instruments

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General Description

This 30-V, 6.6-mΩ, 3.37-mm × 1.47-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint.

Its small size and common drain configuration make the device ideal for multi-cell battery pack applications and small handheld devices.

Top View S1 S1 G1 S1 S1 S2 S2 G2 S2 S2 Configuration DEVICE CSD87501L CSD87501LT Device Information(1) MEDIA QTY PACKAGE 7-Inch Reel 3000 7-Inch Reel 250 3.37 mm × 1.47 mm Land Grid Array Package SHIP Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.

Overview

Product Folder Order Now Technical Documents Tools & Software Support & Community CSD87501L SLPS523B – FEBRUARY 2015 – REVISED MAY 2019 CSD87501L 30-V Dual Common Drain N-Channel NexFET™ Power MOSFET.

Key Features

  • 1 Low on-resistance.
  • Small footprint of 3.37 mm × 1.47 mm.
  • Ultra-low profile.
  • 0.2-mm high.
  • Lead free.
  • RoHS compliant.
  • Halogen free.
  • Gate ESD protection Product Summary TA = 25°C VS1S2 Source-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RS1S2(on) Source-to-Source OnResistance VGS(th) Threshold Voltage.

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