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LM113QML - Reference Diode

General Description

The LM113 are temperature compensated, low voltage reference diodes.

They feature extremelytight regulation over a wide range of operating currents in addition to an unusually-low breakdown voltage and good temperature stability.

Key Features

  • 1.
  • 2 Low Breakdown Voltage: 1.220V.
  • Dynamic Impedance of 0.3Ω from 500 μA to 20 mA.
  • Temperature Stability Typically 1% over.
  • 55°C to 125°C Range.
  • Tight Tolerance: ±5% or ±1%.
  • The characteristics of this reference recommend it for use in bias-regulation circuitry, in low-voltage power supplies or in battery powered equipment. The fact that the breakdown voltage is equal to a physical property of silicon.
  • the energyband gap voltage.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LM113QML is Obsolete LM113QML, LM113QML-SP www.ti.com SNVS367A – DECEMBER 2010 – REVISED APRIL 2013 LM113QML Reference Diode Check for Samples: LM113QML, LM113QML-SP FEATURES 1 •2 Low Breakdown Voltage: 1.220V • Dynamic Impedance of 0.3Ω from 500 μA to 20 mA • Temperature Stability Typically 1% over−55°C to 125°C Range • Tight Tolerance: ±5% or ±1% – The characteristics of this reference recommend it for use in bias-regulation circuitry, in low-voltage power supplies or in battery powered equipment. The fact that the breakdown voltage is equal to a physical property of silicon—the energyband gap voltage—makes it useful for many temperature-compensation and temperature-measurement functions. DESCRIPTION The LM113 are temperature compensated, low voltage reference diodes.