Datasheet Summary
- BiCMOS Design Substantially Reduces ICCZ
- Output Ports Have Equivalent 25-Ω
Resistors; No External Resistors Are Required
- Specifically Designed to Drive MOS DRAMs
- 3-State Outputs Drive Bus Lines or Buffer
Memory Address Registers
- Flow-Through Architecture Optimizes
PCB Layout
- Power-Up High-Impedance State
- ESD Protection Exceeds 2000 V Per
MIL-STD-883C, Method 3015
- Package Options Include Plastic
Small-Outline (DW) Packages, Ceramic Chip Carriers (FK) and Flatpacks (W), and Standard Plastic and Ceramic 300-mil DIPs (JT, NT) description
These 10-bit buffers and bus drivers are specifically designed to drive the capacitive input characteristics of MOS DRAMs. They provide...