SN74CB3Q3253 Datasheet | Texas Instruments

Features - 1 High-Bandwidth Data Path (Up to 500 MHz) (1) - 5-V Tolerant I/Os With Device Powered Up or Powered Down - Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 4 Ω Typical) - Rail-to-Rail Switching on Data I/O Ports - 0- to 5-V Switching With 3.3-V VCC - 0- to 3.3-V Switching With 2.5-V VCC - Bidirectional Data Flow With Near-Zero Propagation Delay - Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 3.5 p F Typical) - Fast Switching Frequency (f OE = 20 MHz Max) - Data and Control Inputs Provide Undershoot Clamp Diodes - Low Power Consumption (ICC = 0.6 m A Typical) - VCC Operating Range From 2.3 V to 3.6 V - Data I/Os Support 0- to 5-V Signal Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V) - Control Inputs Can be Driven by TTL or 5-V and 3.3-V CMOS Outputs - Ioff Supports Partial-Power-Down Mode Operation - Latch-Up Performance Exceeds 100 m A Per JESD 78, Class II - ESD Performance Tested Per JESD 22 - 2000-V Human-Body Model (A114-B, Class II) - 1000-V Charged-Device Model (C101) - Supports Both Digital and Analog Applications: USB Interface, Differential Signal Interface Bus Isolation, Low-Distortion Signal Gating (1) For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report CBT-C, CB3T, and CB3Q Signal-Switch Families, (SCDA008). 3 Description The SN74CB3Q3253 device is a high-bandwidth FET bus switch using a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input and output (I/O) ports. Device Information PART NUMBER PACKAGE BODY SIZE (NOM) SN74CB3Q3253DBQ SSOP (16) 4.90 mm × 3.90 mm SN74CB3Q3253DGV TVSOP (16) 3.60 mm × 4.40 mm SN74CB3Q3253RGY VQFN (16) 4.00 mm × 3.50 mm SN74CB3Q3253PW TSSOP (16) 5.00 mm × 4.40 mm (1) For...