SN74CB3Q3257 Datasheet | Texas Instruments

Features - 1 High-Bandwidth Data Path (up to 500 MHz) - 5-V Tolerant I/Os With Device Powered Up or Powered Down - Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron= 4 Ω Typical) - Rail-to-Rail Switching on Data I/O Ports - 0- to 5-V Switching With 3.3-V VCC - 0- to 3.3-V Switching With 2.5-V VCC - Bidirectional Data Flow With Near-Zero Propagation Delay - Low Input and Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 3.5 p F Typical) - Fast Switching Frequency (f OE = 20 MHz Maximum) - Data and Control Inputs Provide Undershoot Clamp Diodes - Low Power Consumption (ICC = 0.7 m A Typical) - VCC Operating Range From 2.3 V to 3.6 V - Data I/Os Support 0- to 5-V Signaling Levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V) - Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs - Ioff Supports Partial-Power-Down Mode Operation - Latch-Up Performance Exceeds 100 m A Per JESD 78, Class II - ESD Performance Tested Per JESD 22 - 2000-V Human Body Model (A114-B, Class II) - 1000-V Charged-Device Model (C101) - Supports Both Digital and Analog Applications: USB Interface, Differential Signal Interface, Bus Isolation, Low-Distortion Signal Gating (1) (1) For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families, SCDA008. 2 Applications - IP Phones: Wired and Wireless - Optical Modules - Optical Networking: Video Over Fiber and EPON - Private Branch Exchange (PBX) - Wi MAX and Wireless Infrastructure Equipment 3 Description The SN74CB3Q3257 device is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). Device Information(1) PART NUMBER PACKAGE BODY SIZE (NOM) SN74CB3Q3257DGV TVSOP (16) 3.60 mm × 4.40 mm SN74CB3Q3257DBQ SSOP (16) 4.90 mm × 3.90...