Datasheet4U Logo Datasheet4U.com

TMS416169 - 1048576-WORD BY 16-BIT EXTENDED DATA OUT HIGH-SPEED DRAMS

General Description

† A10 and A11 are NC for TMS418169.

The TMS418169 and the TMS416169 are high-speed, 16 777 216-bit dynamic random-access memories (DRAMs) organized as 1 048 576 words of 16 bits each.

Both devices employ state-of-the-art EPIC technology for high performance, reliability, and low power at low cost.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TMS416409A 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES National Semiconductor
TMS4116 16384-Bin Dynamic Random-Access Memory Texas Instruments Inc
TMS417409A 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES National Semiconductor
TMS426409A 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES National Semiconductor
TMS427409A 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES National Semiconductor

Other Datasheets by Texas Instruments

Part Number Description
TMS416160 1048576-WORD BY 16-BIT HIGH-SPEED DRAMS
TMS416160P 1048576-WORD BY 16-BIT HIGH-SPEED DRAMS
TMS416100 DYNAMIC RANDOM-ACCESS MEMORIES
TMS416100P DYNAMIC RANDOM-ACCESS MEMORIES
TMS416400 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TMS416169, TMS418169 1048576-WORD BY 16-BIT EXTENDED DATA OUT HIGH-SPEED DRAMS D Organization . . .