Texas Instruments TMS416169
the TMS416169 are high-speed, 16 777 216-bit dynamic random-access memories (DRAMs) organized as 1 048 576 words of 16 bits each. Both devices employ state-of-the-art EPIC technology for high performance, reliability, and low power at low cost. These devices feature maximum RAS access times of 60 ns, 70 ns, and 80 ns.| Part No. | TMS416169 |
|---|---|
| Datasheet | TMS416169 Download |
| Manufacturer |  Texas Instruments |
| Description | 1048576-WORD BY 16-BIT EXTENDED DATA OUT HIGH-SPEED DRAMS |
| Buy | Stock & Price |
TMS416169, TMS418169 1048576-WORD BY 16-BIT EXTENDED DATA OUT HIGH-SPEED DRAMS D Organization . . . 1 048576 Words by 16 Bits D Single 5-V Power Supply D Performance Ranges: ACCESS ACCESS ACCESS READ OR TIME TIME TIME EDO tRAC MAX tCAC MAX tAA MAX CYCLE MIN ’41x169/P-60 60 ns 15 ns 30 ns 25 ns ’41x169/P-70 70 ns 18 ns 35 ns 30 ns ’41x169/P-80 80 ns 20 ns 40 ns 35 ns D Extended-Data-Out (EDO) Operation D xCAS-Before-RAS ( xCBR) Refresh D RAS-Only Refresh – 1 024-Cycle Refresh in 16 ms (TMS418169) – 4 096-Cycle Refresh in 64 ms (TMS416169) D 3-State Unlatched Output D High-Reliability Plastic 42-Lead (DZ Suffix) 400-Mil-Wide Surface-Mount (SOJ) Package D Operating Free-Air Temperature Range 0°C to 70°C D Texas Instruments Enhanced Performance Implanted CMOS (EPIC™) Process SMKS886C – MAY1995 – REVISED MARCH 1996 DZ PACKAGE ( TOP VIEW ) VCC DQ0 DQ1 DQ2 DQ3 VCC DQ4 DQ5 DQ6 DQ7 NC NC W RAS A11† A10† A0 A1 A2 A3 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 42 VSS 41 DQ15 40 DQ14...
