TPS50601-SP Datasheet | Texas Instruments

Features - 1 5962R10221: - Radiation Hardness Assurance (RHA) up to TID 100 krad (Si) - ELDRS Free 100 krad (Si) - 10 m RAD(Si)/s - Single Event Latchup (SEL) Immune to LET = 85 Me V-cm2/mg (See Radiation Report) - SEB and SEGR Immune to 85 Me V-cm2/mg, SOA Curve Available (See Radiation Report) - SET/SEFI Cross-Section Plot Available (See Radiation Report) - Peak Efficiency: 95% (VO = 3.3 V) - Integrated 55-mΩ/50-mΩ MOSFETs - Split Power Rail: 1.6 to 6.3 V on PVIN - Power Rail: 3 to 6.3 V on VIN - 6-A Maximum Output Current - Flexible Switching Frequency Options: - 100-k Hz to 1-MHz Adjustable Internal Oscillator - External Sync Capability: 100 k Hz to 1 MHz - Sync Pin can be Configured as a 500-k Hz Output for Master/Slave Applications - 0.795-V ±1.258% Voltage Reference at 25°C - Monotonic Start-Up into Prebiased Outputs - Adjustable Soft Start Through External Capacitor - Input Enable and Power-Good Output for Power Sequencing - Power Good Output Monitor for Undervoltage and Overvoltage - Adjustable Input Undervoltage Lockout (UVLO) - 20-Pin Thermally-Enhanced Ceramic Flatpack Package (HKH) - See .ti./swift for SWIFT™ Documentation - See the Tools & Software Tab 2 Applications - Space Satellite Point of Load Supply for FPGAs, Microcontrollers, and ASICs - Space Satellite Payloads - Radiation-Tolerant Applications - Available in Military (- 55°C to 125°C) Temperature Range - Engineering Evaluation (/EM) Samples are Available(1) 3 Description The TPS50601-SP is a radiation hardened, 6.3-V, 6A synchronous step-down converter, which is optimized for small designs through high efficiency and integrating the high-side and low-side MOSFETs. Further space savings are achieved through current mode control, which reduces ponent count, and a high switching frequency, reducing the inductor's footprint. The devices are offered in a thermally enhanced 20-pin ceramic, dual in-line flatpack...