• Part: UCC27223
  • Description: High-Efficiency predictive synchronous buck driver
  • Manufacturer: Texas Instruments
  • Size: 1.15 MB
Download UCC27223 Datasheet PDF
Texas Instruments
UCC27223
UCC27223 is High-Efficiency predictive synchronous buck driver manufactured by Texas Instruments.
FEATURES D Maximizes Efficiency by Minimizing Body-Diode Conduction and Reverse Recovery Losses D Transparent Synchronous Buck Gate Drive Operation From the Single Ended PWM Input Signal D 12-V or 5-V Input Operation D 3.3-V Input Operation With Availability of 12-V Bus Bias D High-Side and Low-Side ±3-A Dual Drivers D On-Board 6.5-V Gate Drive Regulator D ±3-A True Drive Gate Drives for High Current Delivery at MOSFET Miller Thresholds D Automatically Adjusts for Changing Operating Conditions D Thermally Enhanced 14-Pin Power PAD HTSSOP Package Minimizes Board Area and Junction Temperature Rise FUNCTIONAL APPLICATION DIAGRAM APPLICATIONS D Multiphase Converters in bination With the TPS40090 D Non-Isolated 3.3-V, 5-V and 12-V Input dc-to-dc Converters for Processor Power, General puter, Tele and Data Applications DESCRIPTION The UCC27223 is a high-speed synchronous buck drivers for today’s high-efficiency, lower-output voltage designs. Using Predictive Gate Drivet (PGD) control technology, these drivers reduce diode conduction and reverse recovery losses in the synchronous rectifier MOSFET(s). The UCC27223 includes an enable pin that controls the operation of both outputs. A logic latch is also included to keep both outputs low until the first PWM input pulse es in. The RDS(on) of the SR pull-down sourcing device is also minimized for higher frequency operations. VIN PWMIN UCC27223 7 IN VHI 14 6,8 GND G1 13 3 VDD 2 ENBL SW 11,12 4,5 VLO G2 9,10 VOUT This closed loop feedback system detects body-diode conduction, and adjusts deadtime delays to minimize the conduction time interval. This virtually eliminates body-diode conduction while adjusting for temperature, load- dependent delays, and for different MOSFETs. Precise gate timing at the nanosecond level reduces the reverse recovery time of the synchronous rectifier MOSFET body-diode, reducing reverse recovery losses seen in the main (high-side) MOSFET. The lower junction temperature in the low-side MOSFET...