FZ800R16KF4 Datasheet | eupec GmbH

European Power Semiconductor and Electronics pany .. Marketing Information FZ 800 R 16 KF4 18 screwing depth max. 8 61,5 M8 31,5 130 114 M4 28 16,5 2,5 18,5 external connection (to be done) G E E E external connection (to be done) VWK Apr. 1997 IGBT-Module Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung Kollektor-Dauergleichstrom Periodischer Kollektor Spitzenstrom Gesamt-Verlustleistung Gate-Emitter-Spitzenspannung Dauergleichstrom Periodischer Spitzenstrom Isolations-Prüfspannung collector-emitter voltage DC-collector current repetitive peak collector current total power dissipation gate-emitter peak voltage DC forward current repetitive peak forw. current insulation test voltage tp=1ms RMS, f=50 Hz, t= 1 min. tp=1 ms t C=25°C, Transistor /transistor VCES IC ICRM Ptot VGE IF IFRM VISOL FZ 800 R 16 KF4 1600 V 800 A 1600 A 6250 W ± 20 V 800 A 1600 A 3,4 k V min. typ. 3,3 4,4 5,5 130 6 60 0,8 1 1,1 1,3 0,25 0,3 max. 3,7 V 4,8 V 6,5 V - n F - m A - m A 400 n A 400 n A - µs - µs - µs - µs - µs - µs Charakteristische Werte / Characteristic values: Transistor Kollektor-Emitter Sättigungsspannung Gate-Schwellenspannung Eingangskapazität Kollektor-Emitter Reststrom collector-emitter saturation voltage gate threshold voltage input capacity collector-emitter cut-off current gate leakage current gate leakage current turn-on time (inductive load) i C=800A, v GE=15V, t vj=25°C i C=800A, v GE=15V, t vj=125°C i C=65m A, v CE=v GE, tvj=25°C f O=1MHz,t vj=25°C,v CE=25V, v GE=0V v CE=1600V, v GE=0V, t vj=25°C v CE=1600V, v GE=0V, t vj=125°C v CE=0V, v GE=20V, t vj=25°C v CE=0V, v EG=20V, t vj=25°C i C=800A,v CE=900V,v L=±15V v L=±15V, R G=2,4Ω, tvj=25°C v L=±15V, R G=2,4Ω, tvj=125°C Speicherzeit (induktive Last) storage time (inductive load) i C=800A,v CE=900V,v L=±15V v L=±15V, R G=2,4Ω, tvj=25°C v L=±15V, R G=2,4Ω, tvj=125°C Fallzeit (induktive Last) fall time (inductive load) i...