FZ800R17KF6CB2
FZ800R17KF6CB2 is IGBT-Modules manufactured by eupec GmbH.
Technische Information / Technical Information
IGBT-Module IGBT-Modules
FZ 800 R 17 KF6C B2
1700V IGBT Modul mit low loss IGBT der 2. Generation und softer Em Con Diode 1700V IGBT Module with low loss IGBT of 2nd generation and soft Em Con Diode
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom .. repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode I2t
- value, Diode Isolations-Prüfspannung insulation test voltage t P = 1 ms TC = 80 °C TC = 25 °C t P = 1 ms, TC = 80°C VCES IC,nom. IC ICRM 1700 800 1300 1600 V A A A
TC=25°C, Transistor
Ptot
6,6 k W
VGES
+/- 20V
IFRM
VR = 0V, tp = 10ms, TVj = 125°C
I2t
170 k A2s
RMS, f = 50 Hz, t = 1 min.
VISOL
4 k V
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Gateladung gate charge Eingangskapazität input capacitance Rückwirkungskapazität reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 800A, VGE = 15V, Tvj = 25°C IC = 800A, VGE = 15V, Tvj = 125°C IC = 60m A, VCE = VGE, Tvj = 25°C VGE(th) VCE sat min.
4,5 typ.
2,6 3,1 5,5 max.
3,1 3,6 6,5 V V V
VGE = -15V ... +15V
- 9,6
- µC f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
Cies
- 52
- n F f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V VCE = 1700V, VGE = 0V, Tvj = 25°C VCE = 1700V, VGE = 0V, Tvj = 125°C VCE = 0V, VGE = 20V, Tvj = 25°C
Cres ICES
- 2,7 0,02 10
- 1,5 80 400 n F m A m A n...
