Description
This IGBT is produced using advanced trench fieldstop IGBT technology, which provides low V CE(sat), high switching performance and excellent quality.
Features
- ▄ High Speed Switching ▄ Positive Temperature coefficient for easy paralleling ▄ High ruggedness&good thermal stability ▄ Including fast free-wheeling diode
▄ Very tight parameter distribution
GC E
Absolute Maximum Ratings
Characteristics
Symbol
Collector-emitter voltage
V CE
Gate-emitter voltage
V GE
Collector current
T C=25℃ T C=100℃ I C
Pulsed collector current, t p limited by T jmax
I CM
Diode forward current @T C=100℃
IF
Diode pulsed collector current, t p limited by T jmax.
MSG40T120FH Datasheet
