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PNM3FD703E0-2 - MOSFET

General Description

PNM3FD703E0-2 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance.

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Datasheet Details

Part number PNM3FD703E0-2
Manufacturer msksemi
File Size 297.16 KB
Description MOSFET
Datasheet download datasheet PNM3FD703E0-2 Datasheet

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PNM3FD703E0-2 N-Channel MOSFET Description PNM3FD703E0-2 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance. VDS(V) 40 MOSFET Product Summary RDS(on)(Ω) VGS(th)(V) 7.5@ VGS=10V 0.5 to 1.5 ID(A) 0.18 G D S Electrical characteristics per line@25℃( unless otherwise specified) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time Symbol Conditions OFF CHARACTERISTICS VDSS ID =10μA,VGS=0V IDSS VDS =40V,VGS=0V IGSS VDS =0V,VGS=±20V VGS(th) VDS =VGS, ID =250μA RDS(ON) VGS=5V, ID =0.