Datasheet Details
| Part number | PNM3FD703E0-2 |
|---|---|
| Manufacturer | msksemi |
| File Size | 297.16 KB |
| Description | MOSFET |
| Datasheet | PNM3FD703E0-2-msksemi.pdf |
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Overview: PNM3FD703E0-2 N-Channel MOSFET.
| Part number | PNM3FD703E0-2 |
|---|---|
| Manufacturer | msksemi |
| File Size | 297.16 KB |
| Description | MOSFET |
| Datasheet | PNM3FD703E0-2-msksemi.pdf |
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PNM3FD703E0-2 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance.
VDS(V) 40 MOSFET Product Summary RDS(on)(Ω) VGS(th)(V) 7.5@ VGS=10V 0.5 to 1.5 ID(A) 0.18 G D S Electrical characteristics per line@25℃( unless otherwise specified) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time Symbol Conditions OFF CHARACTERISTICS VDSS ID =10μA,VGS=0V IDSS VDS =40V,VGS=0V IGSS VDS =0V,VGS=±20V VGS(th) VDS =VGS, ID =250μA RDS(ON) VGS=5V, ID =0.05A VGS=10V, ID =0.5A DYNAMIC PARAMETERS CISS CDSS CRSS VGS=0V, VDS =25V, f=1MHz SWITCHING PARAMETERS td(on) td(off) VDS=30V, VGS =10V, RG=25Ω, RL=150Ω ID =0.2A Min.
Typ.
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