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I2N65 - N-Channel PowerMOSFET

General Description

The Nell 12N65 is a three-terminal silicon device with current conduction capability of 12A, fast switching speed, low on-state resistance, breakdown voltage rating of 650V, and max.

threshold voltage of 4 volts.

Key Features

  • RDS(ON) = 0.85Ω @ VGS = 10V Ultra low gate charge(54nC max. ) Low reverse transfer capacitance (CRSS = 25pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D G DS TO-220AB (12N65A) GDS D (Drain) TO-220F (12N65AF) G (Gate) S (Source).

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Full PDF Text Transcription for I2N65 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for I2N65. For precise diagrams, and layout, please refer to the original PDF.

SEMICONDUCTOR I2N65 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 12A, 650Volts DESCRIPTION The Nell 12N65 is a three-terminal silicon device with curre...

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SCRIPTION The Nell 12N65 is a three-terminal silicon device with current conduction capability of 12A, fast switching speed, low on-state resistance, breakdown voltage rating of 650V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications. To minimize on-state resistance, provide superior switching performance and commutation mode. FEATURES RDS(ON) = 0.85Ω @ VGS = 10V Ultra low gate charge(54nC max.

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