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MJE2955A - Complementary Silicon power transistors

Download the MJE2955A datasheet PDF. This datasheet also covers the MJE3055A variant, as both devices belong to the same complementary silicon power transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

The MJE3055A is a silicon epitaxial-base planar NPN transistor in TO-220AB package.

lt is intended for use in general-purpose amplifier and switding applications.

The complementary PNP type is MJE2955A.

Key Features

  • Designed for general-purpose switching and amplifier.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MJE3055A-nELL.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTOR MJE3055A(NPN) MJE2955A(PNP) RRooHHSS Nell High Power Products Complementary Silicon power transistors (10A / 60V / 75W) FEATURES Designed for general-purpose switching and amplifier applications. DC current gain specified to 10A High current gain-Band width product: fT = 2 MHz (Min.) @ lC = 0.5 Adc Excellent safe operating area DESCRIPTION The MJE3055A is a silicon epitaxial-base planar NPN transistor in TO-220AB package. lt is intended for use in general-purpose amplifier and switding applications. The complementary PNP type is MJE2955A.