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MJE2955T
MJE2955T
General Purpose and Switching Applications
• DC Current Gain Specified to IC = 10 A • High Current Gain Bandwidth Product : fT = 2MHz (Min.)
1
TO-220 2.Collector 3.Emitter
1.Base
PNP Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Value - 70 - 60 -5 - 10 -6 75 0.