Datasheet Summary
isc Silicon PNP Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -60V(Min)
- High DC Current Gain-
: hFE= 20-100@IC= -4A
- plement to Type MJE3055T
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use in general-purpose amplifier and switching...
