Datasheet Details
| Part number | MJE2955T |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.61 KB |
| Description | PNP Transistor |
| Datasheet | MJE2955T-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor MJE2955T.
| Part number | MJE2955T |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.61 KB |
| Description | PNP Transistor |
| Datasheet | MJE2955T-INCHANGE.pdf |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -60V(Min) ·High DC Current Gain- : hFE= 20-100@IC= -4A ·Complement to Type MJE3055T ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -6 A 75 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.67 ℃/W isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor MJE2955T ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJE2955T | 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS | Motorola |
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MJE2955T | Complementary Silicon Plastic Power Transistors | ON |
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MJE2955T | COMPLEMENTARY SILICON POWER TRANSISTORS | ST Microelectronics |
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MJE2955T | PNP Silicon Transistor | Fairchild |
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MJE2955T | HIGH VOLTAGE TRANSISTOR | UTC |
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