MJE2955T Description
MJE2955T, 3055T plementary Power Transistors plementary Silicon Power Transistors are designed for use in general-purpose amplifier and switching applications.
MJE2955T Key Features
- Power dissipation-PD = 75W at TC = 25°C
- DC current gain hFE = 20 (Minimum) at IC = 4.0A
- VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA
- 55 to +150
- 1 Power Derating
- Collector Cut off Current (VCE = 30V, IB = 0)
- 20 5.0
- Unit V
- 2 “ON” Voltage
- 3 Active-Region Safe Operating Area