MJE2955T - Complementary Silicon Plastic Power Transistors

Key Features

High Current Gain.
Bandwidth Product.
These Devices are Pb.
Free and are RoHS Compliant.

MJE2955T complementary silicon plastic power transistors by ON - Datasheet Preview

Datasheet Details

Part number	MJE2955T
Manufacturer	ON
File Size	58.12 KB
Description	Complementary Silicon Plastic Power Transistors
Datasheet	MJE2955T Datasheet

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MJE2955T (PNP), MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features • High Current Gain − Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C VCEO VCB VEB IC IB PD (Note 1) 60 70 5.0 10 6.0 75 0.6 Vdc Vdc Vdc Adc Adc W W/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.