Datasheet Summary
MJE2955T (PNP), MJE3055T (NPN) plementary Silicon Plastic Power Transistors
These devices are designed for use in general- purpose amplifier and switching applications.
Features
- High Current Gain
- Bandwidth Product
- These Devices are Pb- Free and are RoHS pliant-
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current Base Current Total Device Dissipation
@ TC = 25°C Derate above 25°C
VCEO VCB
IC IB
PD (Note 1)
60 70 5.0 10 6.0
75 0.6
Vdc Vdc Vdc Adc Adc
W W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
- 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table...
