MJE2955 Datasheet and Specifications PDF

The MJE2955 is a (MJE2955 / MJE3055) POWER TRANSISTORS.

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Part NumberMJE2955 Datasheet
ManufacturerMotorola Semiconductor
Overview . .
Part NumberMJE2955 Datasheet
DescriptionPNP Silicon Transistor
ManufacturerFairchild Semiconductor
Overview MJE2955T MJE2955T General Purpose and Switching Applications • DC Current Gain Specified to IC = 10 A • High Current Gain Bandwidth Product : fT = 2MHz (Min.) 1 TO-220 2.Collector 3.Emitter 1.Base. Condition IC= - 200mA, IB = 0 VCE = - 30V, IB = 0 VCE = - 70V, VBE(off) = 1.5V VCE = - 70V, VBE(off) = 1.5V @ TC = 150°C VEB = - 5V, IC = 0 VCE = - 4V, IC = - 4A VCE = - 4V, IC = - 10A IC = - 4A, IB = - 0.4A IC = - 10A, IB = - 3.3A VCE = - 4V, IC = - 4A VCE = - 10V, IC = - 500mA 2 20 5 Min. -60 Max.
Part NumberMJE2955 Datasheet
DescriptionPlastic-Encapsulate Transistors
ManufacturerGalaxy Microelectronics
Overview Plastic-Encapsulate Transistors FEATURES  DC Current Gain Specified to 10A.  High Current Gain. Pb Lead-free Production specification MJE2955 TO-220AB MAXIMUM RATING operating temperature range.
* DC Current Gain Specified to 10A.
* High Current Gain. Pb Lead-free Production specification MJE2955 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -70 V VCEO VEBO IC IB PC Tj,Tstg Collector.
Part NumberMJE2955 Datasheet
DescriptionCOMPLEMENTARY SILICON POWER TRANSISTORS
ManufacturerSTMicroelectronics
Overview The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary PNP type is MJE2955T. 3 . = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICEO Collector Cut-off Current (IB = 0) VCE = 30 V ICEX Collector Cut-off Current (VBE = 1.5V) VCE = 70 V Tcase = 150oC ICBO Collector Cut-off Current (IE = 0) VCBO = 70 V Tcase = 150oC IEBO Emitter Cut-off Current (.

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