Datasheet Summary
N-Channel Enhancement Mode Field Effect Transistor
- General Description
VDSS 20V
Product Summary ID
4.5A
- Features
- Super high dense cell design for low RDS(ON)
- Rugged and reliable
- Simple drive requirement
- SOT-23-3L package
- Package
- Schematic diagram
RDS(ON)(mΩ)TYP 22 @ VGS= 4.5V 40 @ VGS= 2.5V
- Pin configuration Pin Name G D S
- Ordering Information
SOT23-3L 1 3 2
Description Gate Drain Source
Part Number LN2312MR
Storage Temperature -55°C to +150°C
Package SOT-23-3L
Devices Per Reel 3000
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