natlinear LN2312
N-Channel Enhancement Mode Field Effect Transistor
| Part No. | LN2312 |
|---|---|
| Datasheet | LN2312 Download |
| Manufacturer | natlinear |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
GENERAL DESCRIPTION
VDSS 20V Product Summary ID 4.5A●
FEATURES
● Super high dense cell design for low RDS(ON)● Rugged and reliable
● Simple drive requirement
● SOT-23-3L package
● Package
● Schematic diagram D G S RDS(ON)(mΩ)TYP 22 @ VGS= 4.5V 40 @ VGS= 2.5V LN2312
● Pin configuration Pin Name G D S
● Ordering Information SOT23-3L 1 3 2
DESCRIPTION
Gate Drain Source Part Number LN2312MR Storage Temperature -55°C to +150°C Package SOT-23-3L Devices Per Reel 3000●
ABSOLUTE MAXIMUM RATINGS
parameter Drain-source voltage Gate-source voltage Drain current-continuousa@Tj=125℃ -pulse db Maximum power dissipation Operating junction Temperature range Rev.1.0 —Aug. 15, 2012 (TA=25℃ unless otherwise noted) symbol VDS VGS ID IDM PD Tj limit 20 ±10 5 13.5 1.25 -55—150 unit V V A A W ℃ 1●
ELECTRICAL CHARACTERISTICS
LN2312 (TA=25℃ unless otherwise noted) Parameter D
