Datasheet Summary
LESHAN RADIO PANY, LTD.
20V N-Channel Enhancement-Mode MOSFET
- APPLICATIONS 1)Advanced trench process technology 2)High Density Cell Design For Ultra Low On-Resistance 3)We declare that the material of product pliant with RoHS requirements and Halogen Free
- Features
1)VDS= 20V 2)RDS(ON), Vgs@4.5V, Ids@5.0A = 41m Ω 3)RDS(ON), Vgs@2.5V, Ids@4.5A = 47m Ω
1 2
SOT- 23 (TO- 236AB)
3D
- DEVICE MARKING AND ORDERING INFORMATION
Device LN2312LT1G LN2312LT3G
Marking N12 N12
Shipping 3000/Tape&Reel 10000/Tape&Reel
G 1 S 2
- MAXIMUM RATINGS(Ta = 25℃)
Parameter Drain- to- Source Voltage Gate- to- Source Voltage
Continuous Drain Current (Note 3),VGS@4.5V
TA=25℃ TA=70℃
Pulsed...