Datasheet Summary
LESHAN RADIO PANY, LTD.
20V N-Channel Enhancement-Mode MOSFET
Features
- RDS(ON)≦85mΩ@VGS=4.5V
- RDS(ON)≦115mΩ@VGS=2.5V
- RDS(ON)≦135mΩ@VGS=1.8V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
APPLICATIONS
- Power Management in Notebook
- Portable Equipment
- Load Switch
- DSC
Ordering Information
Device
LN2302ALT1G S-LN2302ALT1G
LN2302ALT3G S-LN2302ALT3G
Marking 02A
02A
Shipping 3000/Tape& Reel
10000/Tape& Reel
LN2302ALT1G S-LN2302ALT1G
1 2 SOT- 23
1 2
Absolute...