LN2302LT1G Description
20V N-Channel Enhancement-Mode MOSFET APPLICATIONS 1)High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM 2)We declare that the material of product pliant with RoHS requirements and Halogen Free.
LN2302LT1G Key Features
- DEVICE MARKING AND ORDERING INFORMATION
- MAXIMUM RATINGS(Ta = 25℃)
- ELECTRICAL CHARACTERISTICS (Ta= 25℃) STATIC
- DYNAMIC(Note 3)
- 1.2 -1
- Unit Conditions V VGS = 0 V, ID = 250 μA V VGS = VDS, ID = 250 μA
- pF VGS = 0 V, f = 1.0 MHz
- VDS= 6 V
- nC VGS =4.5 V,VDS = 6 V
- ID = 2.8 A