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LN2302LT1G - 20V N-Channel MOSFET

Key Features

  • VDS= 20V RDS(ON), Vgs@4.5V, Ids@2.8A = 60m Ω RDS(ON), Vgs@2.5V, Ids@2.0A = 115m Ω.
  • DEVICE.

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Datasheet Details

Part number LN2302LT1G
Manufacturer LRC
File Size 533.82 KB
Description 20V N-Channel MOSFET
Datasheet download datasheet LN2302LT1G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LESHAN RADIO COMPANY, LTD. 20V N-Channel Enhancement-Mode MOSFET ●APPLICATIONS 1)High Density Cell Design For Ultra Low On-Resistance Improved Shoot-Through FOM 2)We declare that the material of product compliant with RoHS requirements and Halogen Free ●FEATURES VDS= 20V RDS(ON), Vgs@4.5V, Ids@2.8A = 60m Ω RDS(ON), Vgs@2.5V, Ids@2.