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LN2306LT1G - 30V N-Channel Enhancement-Mode MOSFET

Key Features

  • 1)VDS= 30V 2)RDS(ON), Vgs@10V, Ids@5.8A = 38m Ω 3)RDS(ON), Vgs@4.5V, Ids@5.0A = 43m Ω 4)RDS(ON), Vgs@2.5V, Ids@4.0A = 62m Ω.
  • DEVICE.

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Datasheet Details

Part number LN2306LT1G
Manufacturer LRC
File Size 483.52 KB
Description 30V N-Channel Enhancement-Mode MOSFET
Datasheet download datasheet LN2306LT1G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LESHAN RADIO COMPANY, LTD. 30V N-Channel Enhancement-Mode MOSFET ●APPLICATIONS 1)Advanced trench process technology 2)High Density Cell Design For Ultra Low On-Resistance 3)We declare that the material of product compliant with RoHS requirements and Halogen Free. ●FEATURES 1)VDS= 30V 2)RDS(ON), Vgs@10V, Ids@5.8A = 38m Ω 3)RDS(ON), Vgs@4.5V, Ids@5.0A = 43m Ω 4)RDS(ON), Vgs@2.5V, Ids@4.