Datasheet Summary
LESHAN RADIO PANY, LTD.
30V N-Channel Enhancement-Mode MOSFET
- APPLICATIONS 1)Advanced trench process technology 2)High Density Cell Design For Ultra Low On-Resistance 3)We declare that the material of product pliant with RoHS requirements and Halogen Free.
- Features
1)VDS= 30V 2)RDS(ON), Vgs@10V, Ids@5.8A = 38m Ω 3)RDS(ON), Vgs@4.5V, Ids@5.0A = 43m Ω 4)RDS(ON), Vgs@2.5V, Ids@4.0A = 62m Ω
- DEVICE MARKING AND ORDERING INFORMATION
Device LN2306LT1G LN2306LT3G
Marking N06 N06
Shipping 3000/Tape&Reel 10000/Tape&Reel
1 2
SOT- 23 (TO- 236AB)
3D
G 1 S 2
- MAXIMUM RATINGS(Ta = 25℃)
Parameter Drain- to- Source Voltage Gate- to- Source Voltage Continuous Drain Current Pulsed...