LN2306LT1G Description
30V N-Channel Enhancement-Mode MOSFET APPLICATIONS 1)Advanced trench process technology 2)High Density Cell Design For Ultra Low On-Resistance 3)We declare that the material of product pliant with RoHS requirements and Halogen Free.
LN2306LT1G Key Features
- DEVICE MARKING AND ORDERING INFORMATION
- MAXIMUM RATINGS(Ta = 25℃)
- ELECTRICAL CHARACTERISTICS (Ta= 25℃) STATIC
- 31 34 45
- V VGS = 0 V, ID = 250 μA 1.4 V VGS = VDS, ID = 250 μA
- 1 μA VDS=24V, VGS=0V
- S VDS = 5.0 V, ID = 5 A
- 14.3 2.08 3.64 14 30 76 6