Datasheet Details
| Part number | LN2306 |
|---|---|
| Manufacturer | natlinear |
| File Size | 523.15 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet |
 LN2306 Datasheet
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General Description
VDSS 20V
Product Summary ID
0.65A 0.55A
RDS(ON)(mΩ)TYP 130 @ VGS= 4.5V 160 @ VGS= 2.5V
LN2306
Key Features
- Super high dense cell design for low RDS(ON).
- Rugged and reliable.
- Simple drive requirement.
- SOT-23-3B package.
- Package.
- SOT-23-3B 3 D D.
- Ordering Information GS 12 SOT-23-3B (Top View) G S Part Number LN2306 Storage Temperature -55°C to +150°C Package SOT-23-3B Devices Per Reel 3000.
- Absolute Maximum Ratings parameter Drain-source voltage Gate-source voltage Coutinuous drain current TA=25℃ (Tj=150℃) TA=80℃ Pulsed drain current Drain-s.