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LN2306 Datasheet N-channel Enhancement Mode Field Effect Transistor

Manufacturer: natlinear

Overview: N-Channel Enhancement Mode Field Effect Transistor ■ General.

Datasheet Details

Part number LN2306
Manufacturer natlinear
File Size 523.15 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet LN2306-natlinear.pdf

General Description

VDSS 20V Product Summary ID 0.65A 0.55A RDS(ON)(mΩ)TYP 130 @ VGS= 4.5V 160 @ VGS= 2.5V LN2306 ■

Key Features

  • Super high dense cell design for low RDS(ON).
  • Rugged and reliable.
  • Simple drive requirement.
  • SOT-23-3B package.
  • Package.
  • SOT-23-3B 3 D D.
  • Ordering Information GS 12 SOT-23-3B (Top View) G S Part Number LN2306 Storage Temperature -55°C to +150°C Package SOT-23-3B Devices Per Reel 3000.
  • Absolute Maximum Ratings parameter Drain-source voltage Gate-source voltage Coutinuous drain current TA=25℃ (Tj=150℃) TA=80℃ Pulsed drain current Drain-s.

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