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LN2305 - P-Channel Enhancement Mode Field Effect Transistor

General Description

VDSS -20V Product Summary ID -0.45A -0.35A RDS(ON)(mΩ)TYP 135 @ VGS=-4.5V 180 @ VGS=-2.5V

Key Features

  • Super high dense cell design for low RDS(ON).
  • Rugged and reliable.
  • Simple drive requirement.
  • SOT-23-3L/B package.
  • Package.
  • SOT-23-3L/B 3 D S.
  • Ordering Information GS 12 SOT-23-3L/B (Top View) G D Part Number LN2305 Storage Temperature -55°C to +150°C Package SOT-23-3L/B Devices Per Reel 3000.
  • Absolute Maximum Ratings parameter Drain-source voltage Gate-source voltage Coutinuous drain current (Tj=150℃) TA=25℃ TA=80℃ Pulsed drain current D.

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Datasheet Details

Part number LN2305
Manufacturer natlinear
File Size 658.35 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet LN2305 Datasheet

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P-Channel Enhancement Mode Field Effect Transistor LN2305 ■ General Description VDSS -20V Product Summary ID -0.45A -0.35A RDS(ON)(mΩ)TYP 135 @ VGS=-4.5V 180 @ VGS=-2.