natlinear LN2305
P-Channel Enhancement Mode Field Effect Transistor
GENERAL DESCRIPTION
VDSS -20V Product Summary ID -0.45A -0.35A RDS(ON)(mΩ)TYP 135 @ VGS=-4.5V 180 @ VGS=-2.5V●
FEATURES
● Super high dense cell design for low RDS(ON)● Rugged and reliable
● Simple drive requirement
● SOT-23-3L/B package
● Package
● SOT-23-3L/B 3 D S
● Ordering Information GS 12 SOT-23-3L/B (Top View) G D Part Number LN2305 Storage Temperature -55°C to +150°C Package SOT-23-3L/B Devices Per Reel 3000
●
ABSOLUTE MAXIMUM RATINGS
parameter Drain-source voltage Gate-source voltage Coutinuous drain current (Tj=150℃) TA=25℃ TA=80℃ Pulsed drain current Drain-source Diode forward current Power dissipation TA=25℃ TA=70℃ Operating junction Temperature range (TA=25℃ unless otherwise noted) symbol limit unit VDSS VGSS ID -20 V ±12 V -0.8 A -0.7 A IDM -1.8 A Is -0.58 A 0.27 PD W 0.16 Tj -55—150 ℃ Rev.1.0 —July. 8, 2011 1