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LN2308B - N-Channel Enhancement Mode Field Effect Transistor

General Description

VDSS 20V Product Summary ID 0.65A 0.55A RDS(ON)(mΩ)TYP 260 @ VGS= 4.5V 320 @ VGS= 2.5V

Key Features

  • Super high dense cell design for low RDS(ON).
  • Rugged and reliable.
  • Simple drive requirement.
  • SOT-523 package.
  • Package.
  • SOT-523 3 D D.
  • Ordering Information GS 12 SOT-523 (Top View) G S Part Number LN2308B Storage Temperature -55°C to +150°C Package SOT-523 Devices Per Reel 3000.
  • Absolute Maximum Ratings parameter Drain-source voltage Gate-source voltage Coutinuous drain current TA=25℃ (Tj=150℃) TA=80℃ Pulsed drain current Drain-source D.

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Datasheet Details

Part number LN2308B
Manufacturer natlinear
File Size 645.67 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet LN2308B Datasheet

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N-Channel Enhancement Mode Field Effect Transistor LN2308B ■ General Description VDSS 20V Product Summary ID 0.65A 0.55A RDS(ON)(mΩ)TYP 260 @ VGS= 4.5V 320 @ VGS= 2.