Datasheet Summary
N-Channel Enhancement Mode Field Effect Transistor
- General Description
VDSS 20V
Product Summary ID
0.65A 0.55A
RDS(ON)(mΩ)TYP 260 @ VGS= 4.5V 320 @ VGS= 2.5V
- Features
- Super high dense cell design for low RDS(ON)
- Rugged and reliable
- Simple drive requirement
- SOT-23-3L/B package
- Package
- SOT-23-3B/ SOT-23-3L
- Ordering Information
SOT-23-3B/SOT-23-3L (Top View)
Part Number LN2308
Storage Temperature -55°C to +150°C
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