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LN2300 - N-Channel Enhancement Mode Field Effect Transistor

General Description

VDSS 20V Product Summary ID 3.6A RDS(ON)(mΩ)TYP 33 @ VGS= 4.5V 52 @ VGS= 2.5V LN2300

Key Features

  • Super high dense cell design for low RDS(ON).
  • Rugged and reliable.
  • Simple drive requirement.
  • SOT-23-3L/B package.
  • Package.
  • SOT-23-3L/B 3 D D.
  • Ordering Information GS 12 SOT-23-3L/B (Top View) G S Part Number LN2300 Storage Temperature -55°C to +150°C Package SOT-23-3L/B Devices Per Reel 3000.
  • Absolute Maximum Ratings parameter Drain-source voltage Gate-source voltage Drain current-continuousa@Tj=125℃-pulse db Drain-source Diode forward current.

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Datasheet Details

Part number LN2300
Manufacturer natlinear
File Size 285.39 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet LN2300 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel Enhancement Mode Field Effect Transistor ■ General Description VDSS 20V Product Summary ID 3.6A RDS(ON)(mΩ)TYP 33 @ VGS= 4.5V 52 @ VGS= 2.5V LN2300 ■ Features  Super high dense cell design for low RDS(ON)  Rugged and reliable  Simple drive requirement  SOT-23-3L/B package ■ Package  SOT-23-3L/B 3 D D ■ Ordering Information GS 12 SOT-23-3L/B (Top View) G S Part Number LN2300 Storage Temperature -55°C to +150°C Package SOT-23-3L/B Devices Per Reel 3000 ■ Absolute Maximum Ratings parameter Drain-source voltage Gate-source voltage Drain current-continuousa@Tj=125℃-pulse db Drain-source Diode forward current Maximum power dissipation Operating junction Temperature range (TA=25℃ unless otherwise noted) symbol limit unit VDS 20 V VGS ±8 V ID 3.6 A IDM 12 A Is 1.