natlinear LN2300
N-Channel Enhancement Mode Field Effect Transistor
| Part No. | LN2300 |
|---|---|
| Datasheet | LN2300 Download |
| Manufacturer | natlinear |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Buy | Stock & Price |
GENERAL DESCRIPTION
VDSS 20V Product Summary ID 3.6A RDS(ON)(mΩ)TYP 33 @ VGS= 4.5V 52 @ VGS= 2.5V LN2300●
FEATURES
● Super high dense cell design for low RDS(ON)● Rugged and reliable
● Simple drive requirement
● SOT-23-3L/B package
● Package
● SOT-23-3L/B 3 D D
● Ordering Information GS 12 SOT-23-3L/B (Top View) G S Part Number LN2300 Storage Temperature -55°C to +150°C Package SOT-23-3L/B Devices Per Reel 3000
●
ABSOLUTE MAXIMUM RATINGS
parameter Drain-source voltage Gate-source voltage Drain current-continuousa@Tj=125℃-pulse db Drain-source Diode forward current Maximum power dissipation Operating junction Temperature range (TA=25℃ unless otherwise noted) symbol limit unit VDS 20 V VGS ±8 V ID 3.6 A IDM 12 A Is 1.25 A PD 1.25 W Tj -55—150 ℃ Rev.1.0 —July. 7, 2011 1●
ELECTRICAL CHARACTERISTICS
LN2300 (TA=25℃ unless otherwise noted) Parameter Dra
