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LN2301 - P-Channel Enhancement Mode Field Effect Transistor

General Description

VDSS -20V Product Summary ID -3.6A RDS(ON)(mΩ)TYP 95 @ VGS=-4.5V 115@ VGS=-2.5V

Key Features

  • Super high dense cell design for low RDS(ON).
  • Rugged and reliable.
  • Simple drive requirement.
  • SOT-23-3L/B package.
  • Package.
  • SOT-23-3L/B.
  • Ordering Information Part Number LN2301 Storage Temperature -55°C to +150°C.
  • Pin Configuration Package SOT-23-3L/B Devices Per Reel 3000 S 3 D GS 12 SOT-23-3L/B (TOP VIEW) G D.
  • Marking Rule . 0 . 1 . 6 . E . . SOT-23-3L (TOP VIEW) Notes: ".
  • "represents the batch number. ".
  • "says" 1 ", d.

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Datasheet Details

Part number LN2301
Manufacturer natlinear
File Size 310.70 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet LN2301 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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P-Channel Enhancement Mode Field Effect Transistor LN2301 ■ General Description VDSS -20V Product Summary ID -3.6A RDS(ON)(mΩ)TYP 95 @ VGS=-4.5V 115@ VGS=-2.5V ■ Features  Super high dense cell design for low RDS(ON)  Rugged and reliable  Simple drive requirement  SOT-23-3L/B package ■ Package  SOT-23-3L/B ■ Ordering Information Part Number LN2301 Storage Temperature -55°C to +150°C ■ Pin Configuration Package SOT-23-3L/B Devices Per Reel 3000 S 3 D GS 12 SOT-23-3L/B (TOP VIEW) G D ■ Marking Rule . 0 . 1 . 6 . E .. SOT-23-3L (TOP VIEW) Notes: "• "represents the batch number. "• "says" 1 ", dot not said "0"; For example: dot on the top of the "6", and the top right of the "E", said "010010", used to track the product batch. R Rev.1.1 —Oct. 26. 2016 1 www.