natlinear LN2301
P-Channel Enhancement Mode Field Effect Transistor
GENERAL DESCRIPTION
VDSS -20V Product Summary ID -3.6A RDS(ON)(mΩ)TYP 95 @ VGS=-4.5V 115@ VGS=-2.5V●
FEATURES
● Super high dense cell design for low RDS(ON)● Rugged and reliable
● Simple drive requirement
● SOT-23-3L/B package
● Package
● SOT-23-3L/B
● Ordering Information Part Number LN2301 Storage Temperature -55°C to +150°C
● Pin Configuration Package SOT-23-3L/B Devices Per Reel 3000 S 3 D GS 12 SOT-23-3L/B (TOP VIEW) G D
● Marking Rule . 0 . 1 . 6 . E .. SOT-23-3L (TOP VIEW) Notes: "● "represents the batch number. "● "says" 1 ", dot not said "0"; For example: dot on the top of the "6", and the top right of the "E", said "010010", used to track the product batch. R Rev.1.1 —Oct. 26. 2016 1
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ABSOLUTE MAXIMUM RATINGS
parameter Drain-source voltage Gate-source voltage Drain current-continuousa@Tj=125℃ -pulse db Drain-source Diode forward current M