natlinear LN2308C
N-Channel Enhancement Mode Field Effect Transistor
GENERAL DESCRIPTION
VDSS 20V Product Summary ID 0.65A 0.55A RDS(ON)(mΩ)TYP 260 @ VGS= 4.5V 320 @ VGS= 2.5V●
FEATURES
● Super high dense cell design for low RDS(ON)● Rugged and reliable
● Simple drive requirement
● SOT-323 package
● Package
● SOT-323 3 D D
● Ordering Information GS 12 SOT-323 (Top View) G S Part Number LN2308C Storage Temperature -55°C to +150°C Package SOT-323 Devices Per Reel 3000
●
ABSOLUTE MAXIMUM RATINGS
parameter Drain-source voltage Gate-source voltage Coutinuous drain current TA=25℃ (Tj=150℃) TA=80℃ Pulsed drain current Drain-source Diode forward current Power dissipation TA=25℃ TA=70℃ Operating junction Temperature range (TA=25℃ unless otherwise noted) symbol limit unit VDSS VGSS ID 20 V ±12 V 0.65 A 0.45 A IDM 2.5 A Is 0.3 A 0.27 PD W 0.16 Tj -55—150 ℃ Rev.1.0 —July. 8, 2011 1● Electrical Charac