Datasheet Summary
LESHAN RADIO PANY, LTD.
60V N-Channel Enhancement-Mode MOSFET
Features
- RDS(ON) ≦100mΩ@VGS=10V
- RDS(ON) ≦130mΩ@VGS=4.5V
- RDS(ON) ≦200mΩ@VGS=3.3V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- Capable doing Cu wire bonding
- S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
APPLICATIONS
- Power Management in Note book
- Portable Equipment
- Battery Powered System
- Load Switch
- DSC
Ordering Information
Device LN2308LT1G S-LN2308LT1G LN2308LT3G S-LN2308LT3G
Marking N08 N08
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