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LN2306LT3G - 30V N-Channel Enhancement-Mode MOSFET

Download the LN2306LT3G datasheet PDF. This datasheet also covers the LN2306LT1G variant, as both devices belong to the same 30v n-channel enhancement-mode mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 1)VDS= 30V 2)RDS(ON), Vgs@10V, Ids@5.8A = 38m Ω 3)RDS(ON), Vgs@4.5V, Ids@5.0A = 43m Ω 4)RDS(ON), Vgs@2.5V, Ids@4.0A = 62m Ω.
  • DEVICE.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (LN2306LT1G-LRC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number LN2306LT3G
Manufacturer LRC
File Size 483.52 KB
Description 30V N-Channel Enhancement-Mode MOSFET
Datasheet download datasheet LN2306LT3G Datasheet

📁 Similar Datasheet

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Other Datasheets by LRC

Part Number Description
LN2306LT1G 30V N-Channel Enhancement-Mode MOSFET
LN2302ALT1G 20V N-Channel Enhancement-Mode MOSFET
LN2302LT1G 20V N-Channel MOSFET
LN2302LT3G 20V N-Channel MOSFET
LN2308LT1G 60V N-Channel Enhancement-Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
LESHAN RADIO COMPANY, LTD. 30V N-Channel Enhancement-Mode MOSFET ●APPLICATIONS 1)Advanced trench process technology 2)High Density Cell Design For Ultra Low On-Resistance 3)We declare that the material of product compliant with RoHS requirements and Halogen Free. ●FEATURES 1)VDS= 30V 2)RDS(ON), Vgs@10V, Ids@5.8A = 38m Ω 3)RDS(ON), Vgs@4.5V, Ids@5.0A = 43m Ω 4)RDS(ON), Vgs@2.5V, Ids@4.