Datasheet4U Logo Datasheet4U.com

LN2307B - P-Channel Enhancement Mode Field Effect Transistor

General Description

VDSS -20V Product Summary ID -0.45A -0.35A RDS(ON)(mΩ)TYP 300 @ VGS=-4.5V 450 @ VGS=-2.5V

Key Features

  • Super high dense cell design for low RDS(ON).
  • Rugged and reliable.
  • Simple drive requirement.
  • 2.5V drive.
  • SOT-523 package.
  • Package.
  • SOT-523 3 D S.
  • Ordering Information GS 12 SOT-523 (Top View) G D Part Number LN2307B Storage Temperature -55°C to +150°C Package SOT-523 Devices Per Reel 3000.
  • Absolute Maximum Ratings parameter Drain-source voltage Gate-source voltage Coutinuous drain current (Tj=150℃) TA=25℃ TA=80℃ Pulsed drain current.

📥 Download Datasheet

Datasheet Details

Part number LN2307B
Manufacturer natlinear
File Size 565.55 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet LN2307B Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
P-Channel Enhancement Mode Field Effect Transistor LN2307B ■ General Description VDSS -20V Product Summary ID -0.45A -0.35A RDS(ON)(mΩ)TYP 300 @ VGS=-4.5V 450 @ VGS=-2.5V ■ Features  Super high dense cell design for low RDS(ON)  Rugged and reliable  Simple drive requirement  2.