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Nch+Pch MOSFET
■ Structure
Silicon N-channel MOS FET / Silicon P-channel MOS FET
■ Features
Nch MOS FET and Pch MOS FET are put in DFN2×2-6 package. High-speed switching, low on-resistance. Low voltage drive Built-in G-S Protection Diode.
■ Applications
Switching
■ Package
DFN2×2-6L-A
LN4702
■ Absolute Maximum Ratings
Parameter
Drain-source voltage Gate-source voltage
TA=25℃ Continuous Drain Current (Tj=150℃)
TA=80℃ Pulsed drain current Continuous source current(Diode conduction)
Power dissipation
TA=25℃
Operating junction and storage Temperature range
Symbol VDS VGS
ID
IDM Is
PD
(TA=25℃ unless otherwise noted)
Limit Tr1:N channel Tr1:P channel
Unit
20 -20 V
±12 ±12 V
0.65 -0.8 A
0.45 -0.7 A
1.0 -2.8 A
0.3
-0.58
A
1.0 W/Total
0.
LN4702 Datasheet
