NP12N30G Datasheet | natlinear

300V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP12N30G uses advanced trench technology to provide excellent RDS(ON) and low gate charge.It can be used in a wide variety of applications. General Features - VDS =300V，ID =12A RDS(ON)(Typ.)= 250mΩ @VGS=10V - High density cell design for ultra low Rdson Marking and pin assignment - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation Application - Automotive applications - Hard switched and high frequency circuits - Uninterruptible power supply Package - TO-252-2L XXXX- Wafer Information YYYY- Quality...