NP12N30G Description
Schematic diagram The NP12N30G uses advanced trench technology to provide excellent RDS(ON) and low gate charge.It can be used in a wide variety of applications.
NP12N30G Key Features
- VDS =300V，ID =12A
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Automotive