NP12N30G Overview
Description
The NP12N30G uses advanced trench technology to provide excellent RDS(ON) and low gate can be used in a wide variety of applications. General Features VDS =300V，ID =12A RDS(ON)(Typ.)= 250mΩ @VGS=10V High density cell design for ultra low Rdson Marking and pin assignment Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation.
