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NP3400MR-S - N-Channel Enhancement Mode MOSFET

General Description

The NP3400MR-S uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS =30V，ID =5.8A RDS(ON)(Typ. )=24mΩ @VGS=4.5V RDS(ON)(Typ. )=35mΩ @VGS=2.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package.

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Datasheet Details

Part number NP3400MR-S
Manufacturer natlinear
File Size 396.14 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet NP3400MR-S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel Enhancement Mode MOSFET NP3400MR-S Description Schematic diagram The NP3400MR-S uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications. D G General Features  VDS =30V，ID =5.8A RDS(ON)(Typ.)=24mΩ @VGS=4.5V RDS(ON)(Typ.)=35mΩ @VGS=2.