Datasheet4U Logo Datasheet4U.com

NP4406SR-J - 30V N-Channel Enhancement Mode MOSFET

General Description

The NP4406SR-J uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Conduction and switching losses are minimized due to an extremely low combination of RDS(ON) and Crss.

Key Features

  • VDS =30V，ID =13A RDS(ON)(Typ. )=8mΩ @VGS=10V RDS(ON)(Typ. )=11mΩ @VGS=4.5V.
  • Lead free product is acquired.
  • Surface mount package Marking and pin assignment SOP-8.

📥 Download Datasheet

Datasheet Details

Part number NP4406SR-J
Manufacturer natlinear
File Size 942.06 KB
Description 30V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet NP4406SR-J Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NP40N055CLE MOS FIELD EFFECT TRANSISTOR Renesas
NP40N055DLE MOS FIELD EFFECT TRANSISTOR Renesas
NP40N055ELE MOS FIELD EFFECT TRANSISTOR Renesas
NP40N055KLE MOS FIELD EFFECT TRANSISTOR Renesas
NP40N055MLE MOS FIELD EFFECT TRANSISTOR Renesas

Other Datasheets by natlinear

Part Number Description
NP4406SR 30V N-Channel Enhancement Mode MOSFET
NP44N03 30V N-Channel MOS
NP4008SR 40V N-Channel Enhancement Mode MOSFET
NP45S06D6-Sn 60V N-Channel Enhancement Mode MOSFET
NP4606G 30V N And P-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NP4406SR-J 30V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP4406SR-J uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Conduction and switching losses are minimized due to an extremely low combination of RDS(ON) and Crss. General Features  VDS =30V，ID =13A RDS(ON)(Typ.)=8mΩ @VGS=10V RDS(ON)(Typ.)=11mΩ @VGS=4.